发明申请
US20070272928A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE
审中-公开
薄膜晶体管，具有薄膜晶体管的阵列基板和制造阵列基板的方法
- 专利标题： THIN FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE
- 专利标题（中）： 薄膜晶体管，具有薄膜晶体管的阵列基板和制造阵列基板的方法
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申请号： US11751743申请日： 2007-05-22
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公开(公告)号： US20070272928A1公开(公告)日： 2007-11-29
- 发明人: Ji-Yong Park , Dong-Byum Kim , Jung-Hyun Kim , Chung Yi
- 申请人： Ji-Yong Park , Dong-Byum Kim , Jung-Hyun Kim , Chung Yi
- 优先权： KR2006-47405 20060526
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/84
摘要：
A thin film transistor includes a semiconductor layer a source electrodes a drain electrode and a gate electrode. The semiconductor layer includes a plurality of grain boundaries disposed along a first direction. An acute angle between a gate electrode and a grain boundary prevents grain to boundaries from being formed at the boundary between a channel part and an ion doped part.
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