公开(公告)号：US20070272928A1

公开(公告)日：2007-11-29

申请号：US11751743

申请日：2007-05-22

申请人： Ji-Yong Park ,  Dong-Byum Kim ,  Jung-Hyun Kim ,  Chung Yi

发明人： Ji-Yong Park ,  Dong-Byum Kim ,  Jung-Hyun Kim ,  Chung Yi

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/1296 ,  H01L29/04 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor includes a semiconductor layer a source electrodes a drain electrode and a gate electrode. The semiconductor layer includes a plurality of grain boundaries disposed along a first direction. An acute angle between a gate electrode and a grain boundary prevents grain to boundaries from being formed at the boundary between a channel part and an ion doped part.

摘要翻译： 薄膜晶体管包括半导体层，源电极，漏电极和栅电极。 半导体层包括沿着第一方向设置的多个晶界。 栅电极和晶界之间的锐角防止在沟道部分和离子掺杂部分之间的边界处形成边界。

公开(公告)号：US20060131585A1

公开(公告)日：2006-06-22

申请号：US11285935

申请日：2005-11-23

申请人： Dong-Byum Kim ,  Chung Yi

发明人： Dong-Byum Kim ,  Chung Yi

IPC分类号： H01L29/786

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/56

摘要： A thin film transistor array panel is provided, which includes a substrate; a plurality of semiconductor islands formed on the substrate, the plurality of semiconductor islands including a plurality of first and second extrinsic regions, and a plurality of intrinsic regions; a gate insulating layer covering the semiconductor islands; a plurality of gate lines including a plurality of gate electrodes overlapping the intrinsic regions and formed on the gate insulating layer; a plurality of data lines connected to the first extrinsic regions and formed on the gate insulating layer; and a plurality of pixel electrodes connected to the second extrinsic regions, wherein a plurality of protrusions are formed on the surfaces of the semiconductor islands, and a length of a semiconductor island is a multiple of the a distance between at least two protrusions.

摘要翻译： 提供薄膜晶体管阵列面板，其包括基板; 形成在所述基板上的多个半导体岛，所述多个半导体岛包括多个第一和第二非本征区域以及多个固有区域; 覆盖半导体岛的栅极绝缘层; 多个栅极线，包括与所述本征区域重叠并形成在所述栅极绝缘层上的多个栅电极; 连接到第一非本征区并形成在栅极绝缘层上的多条数据线; 以及连接到第二非本征区域的多个像素电极，其中在半导体岛的表面上形成多个突起，并且半导体岛的长度是至少两个突起之间的距离的倍数。

公开(公告)号：US08106409B2

公开(公告)日：2012-01-31

申请号：US11285935

申请日：2005-11-23

申请人： Dong-Byum Kim ,  Chung Yi

发明人： Dong-Byum Kim ,  Chung Yi

IPC分类号： H01L29/06 ,  H01L27/148 ,  H01L27/15

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/56

摘要： A thin film transistor array panel is provided, which includes a substrate; a plurality of semiconductor islands formed on the substrate, the plurality of semiconductor islands including a plurality of first and second extrinsic regions, and a plurality of intrinsic regions; a gate insulating layer covering the semiconductor islands; a plurality of gate lines including a plurality of gate electrodes overlapping the intrinsic regions and formed on the gate insulating layer; a plurality of data lines connected to the first extrinsic regions and formed on the gate insulating layer; and a plurality of pixel electrodes connected to the second extrinsic regions, wherein a plurality of protrusions are formed on the surfaces of the semiconductor islands, and a length of a semiconductor island is a multiple of the a distance between at least two protrusions.

摘要翻译： 提供薄膜晶体管阵列面板，其包括基板; 形成在所述基板上的多个半导体岛，所述多个半导体岛包括多个第一和第二非本征区域以及多个固有区域; 覆盖半导体岛的栅极绝缘层; 多个栅极线，包括与所述本征区域重叠并形成在所述栅极绝缘层上的多个栅电极; 连接到第一非本征区并形成在栅极绝缘层上的多条数据线; 以及连接到第二非本征区域的多个像素电极，其中在半导体岛的表面上形成多个突起，并且半导体岛的长度是至少两个突起之间的距离的倍数。

公开(公告)号：US20080115718A1

公开(公告)日：2008-05-22

申请号：US11866617

申请日：2007-10-03

申请人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

发明人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

IPC分类号： C30B28/08 ,  B32B3/10

CPC分类号： H01L21/02678 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T428/24273

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

公开(公告)号：US20060228908A1

公开(公告)日：2006-10-12

申请号：US11234609

申请日：2005-09-23

申请人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

发明人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

公开(公告)号：US09005697B2

公开(公告)日：2015-04-14

申请号：US11866617

申请日：2007-10-03

申请人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

发明人： Hyun-Jae Kim ,  Sook-Young Kang ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang

IPC分类号： B05D7/00 ,  H01L27/12 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20

CPC分类号： H01L21/02678 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T428/24273

摘要： A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

摘要翻译： 提供一种制造薄膜晶体管阵列面板的方法，其包括：在绝缘衬底上沉积非晶硅层; 通过使用掩模的多个激光照射将非晶硅层转化为多晶硅层; 在所述多晶硅层上形成栅极绝缘层; 在所述栅极绝缘层上形成多个栅极线; 在栅极线上形成第一层间绝缘层; 在所述第一层间绝缘层上形成多条数据线; 在数据线上形成第二层间绝缘层; 以及在所述第二层间绝缘层上形成多个像素电极，其中所述掩模包括以混合方式布置的多个透射区域和多个阻挡区域。

公开(公告)号：US20060240608A1

公开(公告)日：2006-10-26

申请号：US11472177

申请日：2006-06-21

申请人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

发明人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66765 ,  H01L29/78678

摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.

摘要翻译： 产生脉冲频率高于约300Hz的光。 光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。 光沿预定方向输送以生长初始多晶硅晶体。 具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命 产生激光束增加。

公开(公告)号：US20050181553A1

公开(公告)日：2005-08-18

申请号：US10844998

申请日：2004-05-13

申请人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

发明人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

IPC分类号： H01L21/324 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  C30B29/06 ,  C30B30/00 ,  C30B35/00 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66765 ,  H01L29/78678

摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.

摘要翻译： 产生脉冲频率高于约300Hz的光。 光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。 光沿预定方向输送以生长初始多晶硅晶体。 具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命 产生激光束增加。

公开(公告)号：US07879700B2

公开(公告)日：2011-02-01

申请号：US10547070

申请日：2004-02-24

申请人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

发明人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

IPC分类号： H01L21/322 ,  H01L21/428

CPC分类号： B23K26/0676 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/066 ,  B23K26/067 ,  B23K26/0732 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.

摘要翻译： 硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。 第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

公开(公告)号：US07557050B2

公开(公告)日：2009-07-07

申请号：US11234609

申请日：2005-09-23

申请人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

发明人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

摘要翻译： 在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。 非晶硅薄膜位于基板的第一端部上。 液化硅结晶形成硅晶粒。 激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。 然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。 因此，可以提高非晶硅薄膜的电特性。