发明申请
- 专利标题： METHOD OF FABRICATING THIN FILM TRANSISTOR
- 专利标题（中）： 薄膜晶体管的制作方法
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申请号： US11467940申请日： 2006-08-29
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公开(公告)号： US20070275511A1公开(公告)日： 2007-11-29
- 发明人: Chih-Hung Shih , Ta-Wen Liao , Han-Tu Lin , Feng-Yuan Gan
- 申请人： Chih-Hung Shih , Ta-Wen Liao , Han-Tu Lin , Feng-Yuan Gan
- 申请人地址： TW Hsinchu
- 专利权人： AU OPTRONICS CORP.
- 当前专利权人： AU OPTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 优先权： TW95118412 20060524
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.
公开/授权文献
- US07378303B2 Method of fabricating thin film transistor 公开/授权日：2008-05-27
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