公开(公告)号：US08278157B2

公开(公告)日：2012-10-02

申请号：US12190688

申请日：2008-08-13

申请人： Ta-Wen Liao

发明人： Ta-Wen Liao

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L27/124

摘要： Methods for fabricating array substrates are provided. A method for fabricating an array substrate includes forming a first metal layer over a substrate and then patterned by a first photolithography to forming a gate line, a gate electrode connecting the gate line, and a pad over the substrate. An insulating layer, a semiconductor layer, and an ohmic contact layer are formed over the substrate to cover the gate line, the gate electrode and the pad. The ohmic contact layer, the semiconductor layer, and portions of the insulating layer are patterned by a second photolithography to forming a semiconductor structure over the substrate and a via hole in the insulating layer over the pad to exposing a part of the pad.

摘要翻译： 提供制造阵列基板的方法。 一种制造阵列衬底的方法包括在衬底上形成第一金属层，然后通过第一光刻法形成栅极线，连接栅极线的栅电极和衬底上的焊盘进行图案化。 在衬底上形成绝缘层，半导体层和欧姆接触层，以覆盖栅极线，栅电极和焊盘。 通过第二光刻将欧姆接触层，半导体层和绝缘层的部分图案化，以在衬底上方形成半导体结构，并在绝缘层上方形成通孔，以覆盖焊盘的一部分。

公开(公告)号：US08153337B2

公开(公告)日：2012-04-10

申请号：US12629985

申请日：2009-12-03

申请人： Zong-Long Jhang ,  Chia-Ming Chang ,  Hsiang-Chih Hsiao ,  Chun-Yi Chiang ,  Che-Yung Lai ,  Chou-Huan Yu ,  Ta-Wen Liao

发明人： Zong-Long Jhang ,  Chia-Ming Chang ,  Hsiang-Chih Hsiao ,  Chun-Yi Chiang ,  Che-Yung Lai ,  Chou-Huan Yu ,  Ta-Wen Liao

IPC分类号： G03F1/00 ,  G03F7/00

CPC分类号： H01L27/1288 ,  G03F1/00 ,  G03F1/50 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/78633

摘要： A photomask for fabricating a thin film transistor (TFT) is disclosed. The photomask includes a translucent layer disposed on a transparent substrate and covering U-shaped and rectangular channel-forming regions of the transparent substrate. First and second light-shielding layers are disposed on the translucent layer and located at the outer and inner sides of the U-shaped channel-forming region, respectively, and third and fourth light-shielding layers are disposed on the translucent layer and located at opposite sides of the rectangular channel-forming region, respectively, to serve as source/drain-forming regions. An end of the third light-shielding layer extends to the first light-shielding layer. A plurality of first light-shielding islands is disposed on the translucent layer and located within the rectangular channel-forming region. A method for fabricating source/drain electrodes of a TFT is also disclosed.

摘要翻译： 公开了用于制造薄膜晶体管（TFT）的光掩模。 光掩模包括设置在透明基板上并覆盖透明基板的U形和矩形沟道形成区域的半透明层。 第一和第二遮光层分别设置在透光层上，分别位于U形沟道形成区的外侧和内侧，第三和第四遮光层设置在半透明层上并位于 分别作为源极/漏极形成区域的矩形沟道形成区域的相对侧。 第三遮光层的一端延伸到第一遮光层。 多个第一遮光岛设置在透光层上并且位于矩形通道形成区域内。 还公开了一种用于制造TFT的源极/漏极的方法。

公开(公告)号：US20100055853A1

公开(公告)日：2010-03-04

申请号：US12617712

申请日：2009-11-12

申请人： Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Kuo-Lung Fang ,  Chia-Chi Tsai

发明人： Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Kuo-Lung Fang ,  Chia-Chi Tsai

IPC分类号： H01L21/336

CPC分类号： H01L27/1248 ,  H01L27/1288

摘要： A method for manufacturing a pixel structure is provided. A gate and a gate insulating layer are sequentially formed on a substrate. A semiconductor layer and a second metal layer are sequentially formed on the gate insulating layer. The semiconductor layer and the second metal layer are patterned to form a channel layer, a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and drain are disposed on a portion of the channel layer. The gate, channel, source and drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.

摘要翻译： 提供了一种用于制造像素结构的方法。 栅极和栅极绝缘层依次形成在基板上。 半导体层和第二金属层依次形成在栅极绝缘层上。 通过使用形成在其上的图案化光致抗蚀剂层，将半导体层和第二金属层图案化以形成沟道层，源极和漏极，其中源极和漏极设置在沟道层的一部分上。 栅极，沟道，源极和漏极形成薄膜晶体管。 在图案化的光致抗蚀剂层，栅极绝缘层和薄膜晶体管上形成钝化层。 然后，去除图案化的光致抗蚀剂层，使得其上的钝化层被同时去除以形成图案化的钝化层，并且漏极被暴露。 在图案化的钝化层和漏极上形成像素电极。

公开(公告)号：US20090148972A1

公开(公告)日：2009-06-11

申请号：US12105279

申请日：2008-04-18

申请人： Kuo-Lung Fang ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Shiun-Chang Jan ,  Chia-Chi Tsai

发明人： Kuo-Lung Fang ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Shiun-Chang Jan ,  Chia-Chi Tsai

IPC分类号： H01L21/00

CPC分类号： H01L27/1248 ,  H01L27/1255 ,  H01L27/1288

摘要： A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.

摘要翻译： 一种用于制造像素结构的方法包括以下步骤。 首先，提供基板。 接下来，在基板上形成第一导电层。 接下来，在第一导电层上设置第一荫罩。 接下来，通过第一荫罩施加激光以照射第一导电层以形成栅极。 接下来，在基板上形成栅电介质层以覆盖栅极。 之后，沟道层，源极和漏极同时形成在栅极上的栅极电介质层上，其中栅极，沟道层，源极和漏极一起形成薄膜晶体管。 图案化的钝化层形成在薄膜晶体管上，并且图案化的钝化层露出一部分漏极。 此外，形成电连接到漏极的像素电极。

公开(公告)号：US20090087954A1

公开(公告)日：2009-04-02

申请号：US12017342

申请日：2008-01-22

申请人： Han-Tu Lin ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Chia-Chi Tsai

发明人： Han-Tu Lin ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Chia-Chi Tsai

IPC分类号： H01L21/00

CPC分类号： H01L27/14692 ,  H01L27/124 ,  H01L27/1288

摘要： A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost.

摘要翻译： 提供了一种使用激光烧蚀工艺制造像素结构的方法。 该制造方法通过使用激光烧蚀工艺依次形成栅极，沟道层，源极，漏极，钝化层和像素电极。 特别地，制造方法与光刻和蚀刻工艺不同，从而减少旋涂，软烘烤，硬烘烤，曝光，显影，蚀刻和剥离等复杂的光刻和蚀刻工艺。 因此，制造方法简化了工艺，从而降低了制造成本。

公开(公告)号：US20090053861A1

公开(公告)日：2009-02-26

申请号：US12040914

申请日：2008-03-02

申请人： Chin-Yueh Liao ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Chia-Chi Tsai

发明人： Chin-Yueh Liao ,  Chih-Chun Yang ,  Ming-Yuan Huang ,  Han-Tu Lin ,  Chih-Hung Shih ,  Ta-Wen Liao ,  Chia-Chi Tsai

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A method for fabricating a pixel structure is provided. A substrate is provided, and a gate is formed on the substrate. A gate dielectric layer covering the gate is formed on the substrate. A semiconductor layer is formed on the gate dielectric layer. A first shadow mask exposing parts of the semiconductor layer is provided above the semiconductor layer. A laser is irradiated on the semiconductor layer through the first shadow mask to remove parts of semiconductor layer and form a channel layer. A source and a drain are respectively formed on the channel layer at both sides of the gate. A patterned passivation layer which covers the channel layer and exposes the drain is formed. A conductive layer is formed to cover the patterned passivation layer and the drain. The conductive layer is automatically patterned by the patterned passivation layer to form a pixel electrode.

摘要翻译： 提供了一种用于制造像素结构的方法。 提供衬底，并且在衬底上形成栅极。 在基板上形成覆盖栅极的栅介质层。 在栅极电介质层上形成半导体层。 暴露半导体层的部分的第一荫罩设置在半导体层的上方。 通过第一荫罩将激光照射在半导体层上，以除去半导体层的一部分并形成沟道层。 源极和漏极分别形成在栅极两侧的沟道层上。 形成覆盖沟道层并露出漏极的图案化钝化层。 形成导电层以覆盖图案化的钝化层和漏极。 导电层由图形化的钝化层自动图案化以形成像素电极。

公开(公告)号：US07378303B2

公开(公告)日：2008-05-27

申请号：US11467940

申请日：2006-08-29

申请人： Chih-Hung Shih ,  Ta-Wen Liao ,  Han-Tu Lin ,  Feng-Yuan Gan

发明人： Chih-Hung Shih ,  Ta-Wen Liao ,  Han-Tu Lin ,  Feng-Yuan Gan

IPC分类号： H01L21/84

CPC分类号： H01L29/66765 ,  H01L29/458

摘要： A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

摘要翻译： 提供一种制造薄膜晶体管的方法。 在基板上形成导电层。 在导电层上形成图案化掩模以覆盖预定的薄膜晶体管（TFT）区域，并且去除由图案化掩模暴露的导电层的至少一部分。 施加激光以在图案化掩模中形成激光孔，以暴露导电层的一部分，并且激光孔基本对应于预定TFT区域的沟道区域。 蚀刻暴露的导电层以在沟道区域的相对侧上形成源极和漏极。

公开(公告)号：US20060228839A1

公开(公告)日：2006-10-12

申请号：US11257455

申请日：2005-10-24

申请人： Ta-Wen Liao

发明人： Ta-Wen Liao

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  H01L27/124

摘要： Methods for fabricating array substrates are provided. A method for fabricating an array substrate includes forming a first metal layer over a substrate and then patterned by a first photolithography to forming a gate line, a gate electrode connecting the gate line, and a pad over the substrate. An insulating layer, a semiconductor layer, and an ohmic contact layer are formed over the substrate to cover the gate line, the gate electrode and the pad. The ohmic contact layer, the semiconductor layer, and portions of the insulating layer are patterned by a second photolithography to forming a semiconductor structure over the substrate and a via hole in the insulating layer over the pad to exposing a part of the pad.

摘要翻译： 提供制造阵列基板的方法。 一种制造阵列衬底的方法包括在衬底上形成第一金属层，然后通过第一光刻法形成栅极线，连接栅极线的栅电极和衬底上的焊盘进行图案化。 在衬底上形成绝缘层，半导体层和欧姆接触层，以覆盖栅极线，栅电极和焊盘。 通过第二光刻将欧姆接触层，半导体层和绝缘层的部分图案化，以在衬底上方形成半导体结构，并在绝缘层上方形成通孔，以覆盖焊盘的一部分。

公开(公告)号：US20110223393A1

公开(公告)日：2011-09-15

申请号：US12947825

申请日：2010-11-17

申请人： Hsiang-Chih Hsiao ,  Ta-Wen Liao ,  Chi-Min Yang ,  Shan-Fang Chen ,  Ya-Ping Chang ,  Chi-Hung Yang ,  Chung-Yuan Liao

发明人： Hsiang-Chih Hsiao ,  Ta-Wen Liao ,  Chi-Min Yang ,  Shan-Fang Chen ,  Ya-Ping Chang ,  Chi-Hung Yang ,  Chung-Yuan Liao

IPC分类号： G03F7/20 ,  B32B3/00 ,  G03B27/54

CPC分类号： G03F7/20 ,  G02F1/133526 ,  G02F1/134309 ,  G03B27/58 ,  G03F1/14 ,  G03F7/70208 ,  Y10T428/24802

摘要： An exposure apparatus is provided and adapted for exposing a photoresist layer on a layer to form a plurality of strip exposed patterns. The exposure apparatus includes a light source, a lens group and a mask. The lens group is disposed between the photoresist layer and the light source and includes a plurality of strip lens parallel to each other, wherein an overlapping region between any two neighboring strip lens is defined as a lens connecting region, and the other regions excluding the lens connecting regions are defined as lens regions. The mask is disposed between the photoresist layer and the lens group and includes a plurality of shielding patterns, wherein an outline of the shielding patterns corresponds to the strip exposed patterns, each shielding pattern has a strip opening, and an extension direction of the strip openings is substantially parallel to an extension direction of the shielding patterns.

摘要翻译： 提供了一种曝光装置，其适用于在层上曝光光致抗蚀剂层以形成多个带状曝光图案。 曝光装置包括光源，透镜组和掩模。 透镜组设置在光致抗蚀剂层和光源之间，并且包括彼此平行的多个条状透镜，其中任何两个相邻带状透镜之间的重叠区域被定义为透镜连接区域，而除透镜之外的其它区域 连接区域被定义为透镜区域。 掩模设置在光致抗蚀剂层和透镜组之间，并且包括多个屏蔽图案，其中屏蔽图案的轮廓对应于带状暴露图案，每个屏蔽图案具有带状开口和条形开口的延伸方向 基本上平行于屏蔽图案的延伸方向。

公开(公告)号：US07989243B2

公开(公告)日：2011-08-02

申请号：US12398987

申请日：2009-03-05

申请人： Ta-Wen Liao ,  Chen-Pang Tung ,  Chia-Ming Chang ,  Zong-Long Jhang ,  Che-Yung Lai ,  Chun-Yi Chiang ,  Chou-Huan Yu ,  Hsiang-Chih Hsiao ,  Han-Tang Chou ,  Jun-Kai Chang

发明人： Ta-Wen Liao ,  Chen-Pang Tung ,  Chia-Ming Chang ,  Zong-Long Jhang ,  Che-Yung Lai ,  Chun-Yi Chiang ,  Chou-Huan Yu ,  Hsiang-Chih Hsiao ,  Han-Tang Chou ,  Jun-Kai Chang

IPC分类号： H01L21/00

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/66765

摘要： A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.

摘要翻译： 提供像素结构制造方法。 栅极形成在基板上。 在基板上形成覆盖栅极的栅极绝缘层。 沟道层，源极和漏极同时形成在栅极上方的栅极绝缘层上。 栅极，沟道层，源极和漏极形成薄膜晶体管（TFT）。 在TFT和栅极绝缘层上形成钝化层。 在钝化层上形成黑矩阵。 黑色矩阵在漏极上方具有接触开口，并具有包含开口的滤色器。 彩色滤光片层通过喷墨印刷形成在包含滤色器的开口内。 在黑矩阵和滤色器层上形成电介质层。 将电介质层和钝化层图案化以露出漏极。 形成与漏极电连接的像素电极。