发明申请
- 专利标题： Semiconductor device and fabrication method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11654672申请日： 2007-01-18
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公开(公告)号： US20070278589A1公开(公告)日： 2007-12-06
- 发明人: Nobuyuki Tamura , Jun Suzuki
- 申请人： Nobuyuki Tamura , Jun Suzuki
- 优先权： JP2006-153372 20060601
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A semiconductor device includes: an NMIS transistor on an NMIS region of a semiconductor substrate; a PMIS transistor on a PMIS region of the semiconductor substrate; and a stress dielectric film continuously provided on the semiconductor substrate to cover the NMIS transistor and PMIS transistor, the stress dielectric film having internal stress, wherein part of the stress dielectric film extending over the NMIS region has tensile internal stress compared to part of the stress dielectric film extending over the PMIS region.