A semiconductor device includes: an NMIS transistor on an NMIS region of a semiconductor substrate; a PMIS transistor on a PMIS region of the semiconductor substrate; and a stress dielectric film continuously provided on the semiconductor substrate to cover the NMIS transistor and PMIS transistor, the stress dielectric film having internal stress, wherein part of the stress dielectric film extending over the NMIS region has tensile internal stress compared to part of the stress dielectric film extending over the PMIS region.