发明申请
US20070279967A1 High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors
审中-公开
利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局
- 专利标题： High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors
- 专利标题（中）： 利用环形晶体管的自旋转移磁存储器的高密度磁存储单元布局
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申请号： US11436446申请日： 2006-05-18
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公开(公告)号： US20070279967A1公开(公告)日： 2007-12-06
- 发明人: Xiao Luo , Lien-Chang Wang
- 申请人： Xiao Luo , Lien-Chang Wang
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; G11C11/00 ; G11C11/14 ; H01L31/00
摘要：
A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
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