发明申请
- 专利标题: PLASMA PROCESSING METHOD
- 专利标题(中): 等离子体处理方法
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申请号: US11755233申请日: 2007-05-30
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公开(公告)号: US20070281107A1公开(公告)日: 2007-12-06
- 发明人: Hideo Kitagawa
- 申请人: Hideo Kitagawa
- 优先权: JP2006-149751 20060530
- 主分类号: H05H1/24
- IPC分类号: H05H1/24
摘要:
A method for irradiating plasma of a material to a substrate and introducing the material into the substrate includes an irradiation step of irradiating the plasma to the substrate during an irradiation time period in which the material is not diffused in the substrate, and a non-irradiation step of stopping irradiation of the plasma to the substrate during a non-irradiation time period in which the plasma disappears, wherein the irradiation step and the non-irradiation step are repeated.
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