发明申请
US20070281372A1 MEMORY ELEMENT, METHOD FOR MANUFACTURING MEMORY ELEMENT, MEMORY DEVICE, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING TRANSISTOR
审中-公开
存储元件，制造存储元件的方法，存储器件，电子设备和制造晶体管的方法
- 专利标题： MEMORY ELEMENT, METHOD FOR MANUFACTURING MEMORY ELEMENT, MEMORY DEVICE, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING TRANSISTOR
- 专利标题（中）： 存储元件，制造存储元件的方法，存储器件，电子设备和制造晶体管的方法
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申请号： US11747653申请日： 2007-05-11
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公开(公告)号： US20070281372A1公开(公告)日： 2007-12-06
- 发明人: Hiroshi TAKIGUCHI , Junichi KARASAWA
- 申请人： Hiroshi TAKIGUCHI , Junichi KARASAWA
- 申请人地址： JP Tokyo
- 专利权人： SEIKO EPSON CORPORATION
- 当前专利权人： SEIKO EPSON CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-156380 20060605
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/8238 ; H01L21/8242
摘要：
A method for manufacturing a memory element including forming a first electrode on a first face of a substrate; forming a ferroelectric layer on a second face of the first electrode, the second face being on an opposite side to the substrate side, and the ferroelectric layer being mainly made of a crystalline organic ferroelectric material; and forming a second electrode on a third face of the ferroelectric layer, the third face being on an opposite side to the first electrode side, the second electrode being formed by ejecting an vaporized electrode material in a direction inclined with respect to a normal line direction of the substrate and depositing the vaporized electrode material on the third face of the ferroelectric layer, wherein data writing/reading is performed by changing a polarized state of the ferroelectric layer by applying a voltage between the first electrode and the second electrode.