发明申请
- 专利标题： PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF
- 专利标题（中）： 相变存储器件及其制造方法
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申请号： US11741717申请日： 2007-04-27
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公开(公告)号： US20070285962A1公开(公告)日： 2007-12-13
- 发明人: Chuo Yen , Ming-Hau Tseng
- 申请人： Chuo Yen , Ming-Hau Tseng
- 申请人地址： TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- 专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- 当前专利权人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,POWERCHIP SEMICONDUCTOR CORP.,NANYA TECHNOLOGY CORPORATION,PROMOS TECHNOLOGIES INC.,WINBOND ELECTRONICS CORP.
- 当前专利权人地址： TW HSINCHU TW HSIN-CHU TW TAOYUAN TW HSINCHU TW HSINCHU
- 优先权： TWTW95118259 20060523
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/76
摘要：
A phase change memory device is disclosed. A first columnar electrode and a second columnar electrode are provided, both arranged horizontally. A phase change layer is interposed between the first columnar electrode and the second columnar electrode, electrically connecting both thereof, wherein the entirety of the phase change layer is disposed on a plane. A bottom electrode electrically connects the first columnar electrode. A top electrode electrically connects the second columnar electrode.
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