发明申请
- 专利标题： Method for making split dual gate field effect transistor
- 专利标题（中）： 分离双栅场效应晶体管的制作方法
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申请号： US11377236申请日： 2006-03-15
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公开(公告)号： US20070287246A1公开(公告)日： 2007-12-13
- 发明人: Deyuan Xiao , Gary Chen , Tan Seng , Roger Lee
- 申请人： Deyuan Xiao , Gary Chen , Tan Seng , Roger Lee
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 优先权： CN200610023749.3 20060206
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method for making a semiconductor device with at least two gate regions. The method includes providing a substrate region including a surface. Additionally, the method includes forming a source region in the substrate region by at least implanting a first plurality of ions into the substrate region and forming a drain region in the substrate region by at least implanting a second plurality of ions into the substrate region. The drain region and the source region are separate from each other. Moreover, the method includes depositing a gate layer on the surface and forming a first gate region and a second gate region on the surface.
公开/授权文献
- US07582517B2 Method for making split dual gate field effect transistor 公开/授权日：2009-09-01
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