发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
-
申请号： US11765881申请日： 2007-06-20
-
公开(公告)号： US20070290253A1公开(公告)日： 2007-12-20
- 发明人: Masaru KITO , Nobutoshi Aoki , Masaru Kidoh , Ryota Katsumata , Masaki Kondo , Naoki Kusunoki , Toshiyuki Enda , Sanae Ito , Hiroyoshi Tanimoto , Hideaki Aochi , Akihiro Nitayama , Riichiro Shirota
- 申请人： Masaru KITO , Nobutoshi Aoki , Masaru Kidoh , Ryota Katsumata , Masaki Kondo , Naoki Kusunoki , Toshiyuki Enda , Sanae Ito , Hiroyoshi Tanimoto , Hideaki Aochi , Akihiro Nitayama , Riichiro Shirota
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-170121 20060620
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory device includes: a semiconductor region; device isolation regions placed in the semiconductor region and extending in a column direction; a semiconductor layer placed on the semiconductor region and between the device isolation regions, and having a convex shape in cross section along a row direction; source/drain regions placed in the semiconductor layer and spaced from each other; a gate insulating film placed on the semiconductor layer between the source/drain regions; a floating gate electrode layer placed on the gate insulating film; an intergate insulating film placed on the floating gate electrode layer and upper surfaces of the device isolation regions; and a control gate electrode layer placed on the intergate insulating film and extending in the row direction.
公开/授权文献
- US07755134B2 Nonvolatile semiconductor memory device 公开/授权日：2010-07-13
信息查询
IPC分类:
