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发明申请
US20070290258A1 FIELD EFFECT TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS EXTENDING BENEATH PILLARS 有权
场效应晶体管，包括源/漏区延伸BENEATH PILLARS

FIELD EFFECT TRANSISTORS INCLUDING SOURCE/DRAIN REGIONS EXTENDING BENEATH PILLARS
摘要：
Field effect transistors include a substrate and a pillar that extends away from the substrate. The pillar includes a base adjacent the substrate, a top remote from the substrate, and a sidewall that extends between the base and the top. An insulated gate is provided on the sidewall. A first source/drain region is provided in the substrate beneath the pillar and adjacent the insulated gate. A second source/drain region that is heavily doped compared to the first source/drain region, is provided in the substrate beneath the pillar and remote from the insulated gate. The pillar may be an I-shaped pillar that is narrower between the base and the top compared to adjacent the base and the top, such that the sidewall includes a recessed portion between the base and the top.
摘要（中）：

场效应晶体管包括基板和远离基板延伸的支柱。 支柱包括邻近基板的基部，远离基板的顶部以及在基部和顶部之间延伸的侧壁。 在侧壁上设置绝缘门。 第一源极/漏极区域设置在柱下方的衬底中并且邻近绝缘栅极。 与第一源极/漏极区域相比重掺杂的第二源极/漏极区域设置在支柱下方的衬底中并且远离绝缘栅极。 支柱可以是与基部和顶部相邻的基部和顶部之间较窄的I形支柱，使得侧壁包括在基部和顶部之间的凹部。

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