发明申请
US20070292768A1 Photoacid generators, chemically amplified resist compositions, and patterning process
有权
光酸发生剂，化学放大抗蚀剂组合物和图案化工艺
- 专利标题： Photoacid generators, chemically amplified resist compositions, and patterning process
- 专利标题（中）： 光酸发生剂，化学放大抗蚀剂组合物和图案化工艺
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申请号： US11806970申请日： 2007-06-05
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公开(公告)号： US20070292768A1公开(公告)日： 2007-12-20
- 发明人: Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
- 申请人： Youichi Ohsawa , Kazunori Maeda , Satoshi Watanabe
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 优先权： JP2006-164383 20060614
- 主分类号： G03C1/00
- IPC分类号： G03C1/00 ; C07D333/36 ; G03C5/56
摘要：
A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
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