发明申请
- 专利标题： Unlanded via process without plasma damage
- 专利标题（中）： 通过无等离子体损伤的过程无人驾驶
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申请号： US11453000申请日： 2006-06-15
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公开(公告)号： US20070293034A1公开(公告)日： 2007-12-20
- 发明人: Tuung Luoh , Ling-Wuu Yang , Kuang-Chao Chen
- 申请人： Tuung Luoh , Ling-Wuu Yang , Kuang-Chao Chen
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor device with an unlanded via having an air gap dielectric layer and a silicon-rich oxide (SRO) inter-metal dielectric (IMD) layer, and a method of making the same are provided. The SRO layer acts as an etch-stop layer to prevent unlanded via penetration completely through the IMD layer. In addition, the SRO has a higher extinction coefficient (k) than conventional high-density plasma (HDP) oxide layers, thereby preventing plasma etch damage and excessive void formation in an unlanded via.
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