In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.