Invention Application
- Patent Title: Strained semiconductor device and method of making same
- Patent Title (中): 应变半导体器件及其制造方法
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Application No.: US11473883Application Date: 2006-06-23
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Publication No.: US20070295989A1Publication Date: 2007-12-27
- Inventor: Jin-Ping Han , Hung Y. Ng , Judson R. Holt
- Applicant: Jin-Ping Han , Hung Y. Ng , Judson R. Holt
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/336

Abstract:
A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor material that varies along an interface between the side portion of the compound semiconductor region and the side portion of the semiconductor body
Public/Granted literature
- US07772676B2 Strained semiconductor device and method of making same Public/Granted day:2010-08-10
Information query
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