Invention Application
US20070295989A1 Strained semiconductor device and method of making same 有权
应变半导体器件及其制造方法

Strained semiconductor device and method of making same
Abstract:
A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor material that varies along an interface between the side portion of the compound semiconductor region and the side portion of the semiconductor body
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