发明申请
US20070296044A1 DEVICE HAVING DUAL ETCH STOP LINER AND REFORMED SILICIDE LAYER AND RELATED METHODS
有权
具有双层蚀刻层和改性硅酸盐层的装置及相关方法
- 专利标题: DEVICE HAVING DUAL ETCH STOP LINER AND REFORMED SILICIDE LAYER AND RELATED METHODS
- 专利标题(中): 具有双层蚀刻层和改性硅酸盐层的装置及相关方法
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申请号: US11850968申请日: 2007-09-06
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公开(公告)号: US20070296044A1公开(公告)日: 2007-12-27
- 发明人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人: Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation of the dual silicon nitride liners. A first aspect of the invention provides a method for use in the manufacture of a semiconductor device comprising the steps of applying a first silicon nitride liner to a silicide layer, removing a portion of the first silicon nitride liner, reforming a portion of the silicide layer removed during the removal step, and applying a second silicon nitride liner to the silicide layer.