发明申请
- 专利标题: TEST STRUCTURE FOR MONITORING LEAKAGE CURRENTS IN A METALLIZATION LAYER
- 专利标题(中): 用于监测金属化层中漏电流的测试结构
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申请号: US11623372申请日: 2007-01-16
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公开(公告)号: US20070296439A1公开(公告)日: 2007-12-27
- 发明人: Frank Feustel , Thomas Werner , Carsten Peters
- 申请人: Frank Feustel , Thomas Werner , Carsten Peters
- 优先权: DE102006025351.5 20060531
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
By providing a plurality of resistors and a plurality of test patterns within a leakage current test structure, the number of probe pads required for estimating the plurality of test patterns may be significantly reduced, wherein, in some illustrative embodiments, several test patterns may be simultaneously assessed on the basis of two probe pads. Consequently, process parameters and/or design parameters for manufacturing metallization structures of semiconductor devices may be efficiently monitored and controlled.
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