发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- 专利标题（中）： 磁电元件和磁记忆装置
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申请号： US11847496申请日： 2007-08-30
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公开(公告)号： US20070297101A1公开(公告)日： 2007-12-27
- 发明人: Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 申请人： Koichiro Inomata , Kentaro Nakajima , Yoshiaki Saito , Masayuki Sagoi , Tatsuya Kishi
- 优先权： JP11-262327 19990916; JP11-263741 19990917; JP2000-265663 20000901; JP2000-265664 20000901
- 主分类号： G11B5/127
- IPC分类号： G11B5/127
摘要：
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
公开/授权文献
- US07593193B2 Magnetoresistive element and magnetic memory device 公开/授权日：2009-09-22
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