公开(公告)号：US07345852B2

公开(公告)日：2008-03-18

申请号：US11367483

申请日：2006-03-06

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B5/39 ,  G11C11/15 ,  G11C7/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。

公开(公告)号：US20070297101A1

公开(公告)日：2007-12-27

申请号：US11847496

申请日：2007-08-30

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B5/127

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。

公开(公告)号：US20050249029A1

公开(公告)日：2005-11-10

申请号：US11180558

申请日：2005-07-14

申请人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

发明人： Koichi Fujisaki ,  Kentaro Nakajima ,  Takeshi Chujoh ,  Yasuhiro Taniguchi

IPC分类号： G06F12/02 ,  G11C8/10 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C5/00

CPC分类号： G06F12/0207 ,  G11C8/10

摘要： A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner data is read from a magnetoresistive memory module in both row and column directions.

摘要翻译： 存储单元模块包括由M列×N行的存储器单元形成的存储单元阵列。 每个存储单元包括具有半导体元件的磁阻元件或磁阻元件。 存储器模块包括通过列方向访问存储单元阵列的第一存取装置和通过行方向访问存储单元阵列的第二存取装置。 以这种方式，在行和列方向上从磁阻存储器模块读取数据。

公开(公告)号：US06947312B2

公开(公告)日：2005-09-20

申请号：US10606733

申请日：2003-06-27

申请人： Kentaro Nakajima

发明人： Kentaro Nakajima

IPC分类号： H01L27/10 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L43/08 ,  G11C7/00

CPC分类号： G11C11/15

摘要： A second conductive layer is formed above a first conductive layer and arranged substantially perpendicular to the first conductive layer. A plurality of magneto-resistance effect elements are formed between the first and second conductive layers and arranged in the lengthwise direction of the first conductive layer and contain free layers whose spin directions are controlled to be reversed by a resultant magnetic field caused by the first and second conductive layers. A magnetic layer is inserted between the first conductive layer and the magneto-resistance effect elements and causes magnetic interaction with respect to the free layers of the magneto-resistance effect elements.

摘要翻译： 第二导电层形成在第一导电层之上并且基本上垂直于第一导电层布置。 多个磁阻效应元件形成在第一和第二导电层之间并且沿第一导电层的长度方向布置，并且包含其自旋方向由第一和第二导电层引起的合成磁场被控制为反转的自由层， 第二导电层。 在第一导电层和磁阻效应元件之间插入磁性层，并且相对于磁阻效应元件的自由层引起磁性相互作用。

公开(公告)号：US20050185347A1

公开(公告)日：2005-08-25

申请号：US11110869

申请日：2005-04-21

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11B5/33

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。

公开(公告)号：US20050020011A1

公开(公告)日：2005-01-27

申请号：US10702574

申请日：2003-11-07

申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

IPC分类号： H01L27/105 ,  C23F4/00 ,  G11C11/00 ,  G11C11/02 ,  H01F10/32 ,  H01F41/30 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/119 ,  H01L43/08 ,  H01L43/12

CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

公开(公告)号：US06812511B2

公开(公告)日：2004-11-02

申请号：US10406387

申请日：2003-04-04

申请人： Kentaro Nakajima ,  Minoru Amano

发明人： Kentaro Nakajima ,  Minoru Amano

IPC分类号： H01L2976

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

公开(公告)号：US06751074B2

公开(公告)日：2004-06-15

申请号：US10443830

申请日：2003-05-23

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B539

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。

公开(公告)号：US06605836B2

公开(公告)日：2003-08-12

申请号：US10097571

申请日：2002-03-15

申请人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

发明人： Tatsuya Kishi ,  Shigeki Takahashi ,  Kentaro Nakajima ,  Minoru Amano ,  Masayuki Sagoi ,  Yoshiaki Saito

IPC分类号： H01L31119

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/398 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01L43/08 ,  Y10S428/90 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/4905 ,  Y10T29/49052 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/32

摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.

摘要翻译： 用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。 磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。 端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。 平面形状可以具有其磁畴稳定并且开关磁场减小的S形。 磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

公开(公告)号：US06590244B2

公开(公告)日：2003-07-08

申请号：US10101702

申请日：2002-03-21

申请人： Yoshiaki Asao ,  Kazumasa Sunouchi ,  Kentaro Nakajima

发明人： Yoshiaki Asao ,  Kazumasa Sunouchi ,  Kentaro Nakajima

IPC分类号： H01L2976

CPC分类号： G11C5/025 ,  B82Y10/00 ,  G11C5/02 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L28/20 ,  H01L43/08

摘要： A memory cell section includes a first wiring which is extended in a first direction, and a second wiring which is extended in a second direction different from the first direction, and a third wiring which is disposed between the first and second wirings, and a first magneto resistive effect element which is disposed at an intersection of the first and second wirings between the first and second wirings, and is connected to the second and third wirings. Further, a peripheral circuit section includes a fourth wiring, and a fifth wiring which is disposed above the fourth wiring, and a second magneto resistive effect element which is disposed between the fourth and fifth wirings and is connected to the fourth and fifth wirings to be used as a resistive element.