发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- 专利标题（中）： 磁性元件和磁记忆
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申请号： US11626042申请日： 2007-01-23
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公开(公告)号： US20070297220A1公开(公告)日： 2007-12-27
- 发明人: Masatoshi YOSHIKAWA , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人： Masatoshi YOSHIKAWA , Tadashi Kai , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 优先权： JP2006-172844 20060622
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.