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    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
    2.
    发明授权
    Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc 有权
    具有含有硼和选自Ca，Mg，Sr，Ba，Ti和Sc的元素的中间氧化物层的磁阻效应元件

    公开(公告)号：US07920361B2

    公开(公告)日：2011-04-05

    申请号：US11844069

    申请日：2007-08-23

    申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

    摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

    Magnetoresistance effect element and magnetoresistive random access memory using the same
    5.
    发明授权
    Magnetoresistance effect element and magnetoresistive random access memory using the same 有权
    磁阻效应元件和使用其的磁阻随机存取存储器

    公开(公告)号：US07924607B2

    公开(公告)日：2011-04-12

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME
    6.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME 有权
    磁阻效应元件和磁阻随机存取存储器

    公开(公告)号：US20080253174A1

    公开(公告)日：2008-10-16

    申请号：US12047749

    申请日：2008-03-13

    申请人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi YOSHIKAWA ,  Eiji Kitagawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.

    摘要翻译： 磁阻效应元件包括第一磁性层，第二磁性层和第一间隔层。 第一磁性层具有不变的磁化方向。 第二磁性层具有可变的磁化方向，并且包含选自Fe，Co和Ni中的至少一种元素，选自Ru，Rh，Pd，Ag，Re，Os，Ir，Pt和Au中的至少一种元素， 和选自V，Cr和Mn中的至少一种元素。 间隔层形成在第一磁性层和第二磁性层之间，由非磁性材料制成。 流过第一磁性层，间隔层和第二磁性层的双向电流使得第二磁性层的磁化方向可变。

    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY
    7.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
    磁电效应元件和磁阻随机存取存储器

    公开(公告)号：US20080291585A1

    公开(公告)日：2008-11-27

    申请号：US11844069

    申请日：2007-08-23

    申请人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadashi Kai ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/33

    CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.

    摘要翻译： 可以提供具有低电流（RA）和高TMR比的低电流来反向磁化方向的磁阻效应元件。 磁阻效应元件包括：膜堆叠，其包括磁化自由层，其包括其中磁化方向可变的磁性层，包括其中磁化方向被钉扎的磁性层的磁化固定层，以及设置在磁化自由度之间的中间层 层和磁化固定层，中间层是含有硼（B）的氧化物和选自Ca，Mg，Sr，Ba，Ti和Sc的元素。 通过中间层在磁化钉扎层和磁化自由层之间双向施加电流，使得无磁化层的磁化是可逆的。

    Magnetic random access memory device having thermal agitation property and high write efficiency
    8.
    发明授权
    Magnetic random access memory device having thermal agitation property and high write efficiency 有权
    具有热搅拌性能和高写入效率的磁性随机存取存储器件

    公开(公告)号：US07190613B2

    公开(公告)日：2007-03-13

    申请号：US10862617

    申请日：2004-06-08

    申请人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

    发明人： Toshihiko Nagase ,  Hiroaki Yoda ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Tomomasa Ueda

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

    摘要翻译： MTJ元件具有两个磁性层和一个非磁性层。 MTJ元件的电阻取决于两个磁性层是平行还是反平行磁化而变化。 在适于通过使写入布线产生感应磁通并因此改变记录层的磁化方向将数据写入MTJ元件的MRAM中，MTJ元件是垂直的MTJ元件，其中两个磁性层中的每一个是 在垂直于其平面的方向上磁化。 写入布线沿垂直于MTJ元件的厚度方向的方向放置，并将产生的磁场施加到MTJ元件的被磁化方向上的磁性层。 磁轭将MTJ元件沿其厚度方向固定。

    Magnetoresistive element and magnetic memory
    9.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08098514B2

    公开(公告)日：2012-01-17

    申请号：US12233121

    申请日：2008-09-18

    申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

    摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

    摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。