发明申请
- 专利标题： SUBSTRATE PROCESSING METHOD AND APPARATUS
- 专利标题（中）： 基板加工方法和装置
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申请号： US11757151申请日： 2007-06-01
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公开(公告)号： US20070298188A1公开(公告)日： 2007-12-27
- 发明人: Takahisa OTSUKA , Tsuyoshi Shibata
- 申请人： Takahisa OTSUKA , Tsuyoshi Shibata
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-174695 20060626
- 主分类号： C23C18/02
- IPC分类号： C23C18/02 ; G05D23/00
摘要：
A substrate processing method is arranged to perform a heat process on a substrate with a coating film formed thereon to bake and cure the coating film. At first, the substrate, with the coating film formed thereon, is held at a preparatory temperature lower than a lower limit of temperature for baking and curing the coating film, to adjust distribution of a predetermined component in the coating film. Then, the substrate, with distribution of the predetermined component thus adjusted, is subjected to a heat process at a temperature not lower than the lower limit of temperature.
公开/授权文献
- US07877895B2 Substrate processing apparatus 公开/授权日：2011-02-01
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