NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

Invention Application

US20080001138A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权

Title translation: 基于氮化物的半导体发光器件

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Patent Title: NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
Patent Title (中): 基于氮化物的半导体发光器件
Application No.: US11380415

Application Date: 2006-04-26
Publication No.: US20080001138A1

Publication Date: 2008-01-03
Inventor: Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
Applicant: Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
Applicant Address: KR KYUNGKI-DO
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Current Assignee Address: KR KYUNGKI-DO
Priority: KR2004-10538 20040218
Main IPC: H01L33/00
IPC: H01L33/00

Abstract:

Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0

Abstract(Chinese):

本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

Public/Granted literature

US07893443B2 Nitride based semiconductor light-emitting device Public/Granted day:2011-02-22

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L33/00	至少有一个电位跃变势垒或表面势垒的专门适用于光发射的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；这些半导体器件的零部件（H01L51/00优先；由在一个公共衬底中或其上形成有多个半导体组件并包括具有至少一个电位跃变势垒或表面势垒，专门适用于光发射的器件入H01L27/15；半导体激光器入H01S5/00）