发明申请
- 专利标题: Non-volatile semiconductor memory devices
- 专利标题(中): 非易失性半导体存储器件
-
申请号: US11823397申请日: 2007-06-27
-
公开(公告)号: US20080001212A1公开(公告)日: 2008-01-03
- 发明人: Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 申请人: Chang-Hyun Lee , Jung-Dal Choi , Byoung-Woo Ye
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2001-0037421 20010628; KR2002-0005622 20020131; KR2003-0026776 20030428
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.
信息查询
IPC分类: