公开(公告)号：US07400009B2

公开(公告)日：2008-07-15

申请号：US11043485

申请日：2005-01-26

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/788

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L21/28291 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11568 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/42332 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/792

摘要： Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

摘要翻译： 提供浮动阱非易失性存储器件和方法。 存储器件包括半导体衬底和相邻的栅电极。 在基板和栅电极之间可以是具有第一介电常数的隧道绝缘层，具有大于第一介电常数的第二介电常数的阻挡绝缘层和电荷存储层。

公开(公告)号：US20080135923A1

公开(公告)日：2008-06-12

申请号：US12031096

申请日：2008-02-14

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

摘要翻译： 非易失性存储器件包括在半导体衬底上的隧道绝缘层，电荷存储层，阻挡绝缘层和栅电极。 电荷存储层位于隧道绝缘层上，并且具有比隧道绝缘层更小的带隙，并且具有比半导体衬底更大的带隙。 阻挡绝缘层位于电荷存储层上，并且具有比电荷存储层更大的带隙，并且具有比隧道绝缘层更小的带隙。 栅电极位于阻挡绝缘层上。

公开(公告)号：US20080001212A1

公开(公告)日：2008-01-03

申请号：US11823397

申请日：2007-06-27

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

摘要翻译： 非易失性存储器件包括在半导体衬底上的隧道绝缘层，电荷存储层，阻挡绝缘层和栅电极。 电荷存储层位于隧道绝缘层上，并且具有比隧道绝缘层更小的带隙，并且具有比半导体衬底更大的带隙。 阻挡绝缘层位于电荷存储层上，并且具有比电荷存储层更大的带隙，并且具有比隧道绝缘层更小的带隙。 栅电极位于阻挡绝缘层上。

公开(公告)号：US20050128816A1

公开(公告)日：2005-06-16

申请号：US11043485

申请日：2005-01-26

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L21/8247 ,  G11C11/34 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L31/0328

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L21/28291 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11568 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/42332 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/792

摘要： Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

公开(公告)号：US06858906B2

公开(公告)日：2005-02-22

申请号：US10184328

申请日：2002-06-27

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L21/8247 ,  G11C11/34 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L31/0328

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L21/28291 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11568 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/42332 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/792

摘要： Floating trap non-volatile memory devices and methods are provided. The memory devices include a semiconductor substrate and an adjacent gate electrode. Between the substrate and the gate electrode may be a tunneling insulating layer having a first dielectric constant, a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant, and a charge storage layer.

摘要翻译： 提供浮动阱非易失性存储器件和方法。 存储器件包括半导体衬底和相邻的栅电极。 在基板和栅电极之间可以是具有第一介电常数的隧道绝缘层，具有大于第一介电常数的第二介电常数的阻挡绝缘层和电荷存储层。

公开(公告)号：US20080265307A1

公开(公告)日：2008-10-30

申请号：US12133858

申请日：2008-06-05

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

公开(公告)号：US07968931B2

公开(公告)日：2011-06-28

申请号：US12503354

申请日：2009-07-15

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

摘要翻译： 非易失性存储器件包括在半导体衬底上的隧道绝缘层，电荷存储层，阻挡绝缘层和栅电极。 电荷存储层位于隧道绝缘层上，并且具有比隧道绝缘层更小的带隙，并且具有比半导体衬底更大的带隙。 阻挡绝缘层位于电荷存储层上，并且具有比电荷存储层更大的带隙，并且具有比隧道绝缘层更小的带隙。 栅电极位于阻挡绝缘层上。

公开(公告)号：US07759723B2

公开(公告)日：2010-07-20

申请号：US12133858

申请日：2008-06-05

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

公开(公告)号：US07804120B2

公开(公告)日：2010-09-28

申请号：US12031096

申请日：2008-02-14

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

摘要翻译： 非易失性存储器件包括在半导体衬底上的隧道绝缘层，电荷存储层，阻挡绝缘层和栅电极。 电荷存储层位于隧道绝缘层上，并且具有比隧道绝缘层更小的带隙，并且具有比半导体衬底更大的带隙。 阻挡绝缘层位于电荷存储层上，并且具有比电荷存储层更大的带隙，并且具有比隧道绝缘层更小的带隙。 栅电极位于阻挡绝缘层上。

公开(公告)号：US20090294838A1

公开(公告)日：2009-12-03

申请号：US12503354

申请日：2009-07-15

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Byoung-Woo Ye

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11524 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/7881 ,  H01L29/792

摘要： A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

摘要翻译： 非易失性存储器件包括在半导体衬底上的隧道绝缘层，电荷存储层，阻挡绝缘层和栅电极。 电荷存储层在隧道绝缘层上，并且具有比隧道绝缘层更小的带隙，并且具有比半导体衬底更大的带隙。 阻挡绝缘层位于电荷存储层上，并且具有比电荷存储层更大的带隙，并且具有比隧道绝缘层更小的带隙。 栅电极位于阻挡绝缘层上。