发明申请
- 专利标题： Silicon level solution for mitigation of substrate noise
- 专利标题（中）： 硅片解决方案，用于减轻衬底噪声
-
申请号： US11479583申请日： 2006-06-29
-
公开(公告)号： US20080001262A1公开(公告)日： 2008-01-03
- 发明人: Telesphor Kamgaing
- 申请人： Telesphor Kamgaing
- 主分类号： H01L23/552
- IPC分类号： H01L23/552
摘要：
The techniques described herein reduce the substrate noise current that exists when digital and analog components reside on the same microelectronic die. Single or multiple rows of isolation vias form isolation barriers between the individual circuit blocks. The isolation vias may be hollow or (lined or filled) with a conductive or non-conductive material.
信息查询
IPC分类:
