发明申请
- 专利标题: High damage threshold Q-switched CO2 laser
- 专利标题(中): 高损伤阈值Q开关CO2激光器
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申请号: US11481887申请日: 2006-07-06
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公开(公告)号: US20080002751A1公开(公告)日: 2008-01-03
- 发明人: Gongxue Hua , Vernon Seguin , Leon A. Newman , Eric R. Mueller
- 申请人: Gongxue Hua , Vernon Seguin , Leon A. Newman , Eric R. Mueller
- 主分类号: H01S3/11
- IPC分类号: H01S3/11 ; H01S3/22
摘要:
A thin film polarizer (TFP) and a half-wave CdTe electro-optical crystal are utilized to achieve a higher damage threshold in Q-switching CO2 lasers for material processing applications. Half-wave CdTe electro-optical modulators can be used without the arcing and corona problems typically associated with the higher drive voltage by placing low dielectric constant insulators (such as BeO) around the CdTe crystal. Doubling the voltage placed across a CdTe crystal enables the crystal to function as a half-wave phase retarder EO switch with the same dimensions as a crystal functioning as a quarter-wave EO modulator. These half-wave EO switches can be used with TFPs to shape the output pulses, as well as to direct alternate pulses of repetitively pulsed super pulsed slab lasers to alternate scanners, thereby doubling the output of laser hole drilling systems.
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