发明申请
- 专利标题: Method for manufacturing a magneto-resistance effect element, and magneto-resistance effect element
- 专利标题(中): 磁阻效应元件的制造方法以及磁阻效应元件
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申请号: US11802474申请日: 2007-05-23
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公开(公告)号: US20080008909A1公开(公告)日: 2008-01-10
- 发明人: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JPP2006-188711 20060707
- 主分类号: G11B5/33
- IPC分类号: G11B5/33 ; G11B5/39
摘要:
A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.