发明申请
- 专利标题： Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus
- 专利标题（中）： 半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
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申请号： US11730818申请日： 2007-04-04
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公开(公告)号： US20080011947A1公开(公告)日： 2008-01-17
- 发明人: Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
- 申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
- 优先权： JP2006-104289 20060405
- 主分类号： G01N23/00
- IPC分类号： G01N23/00 ; H01L21/66
摘要：
A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.