公开(公告)号：US07973281B2

公开(公告)日：2011-07-05

申请号：US12458343

申请日：2009-07-08

申请人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

发明人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

IPC分类号： G01N23/00

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.

摘要翻译： 半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在 平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

公开(公告)号：US20090220142A1

公开(公告)日：2009-09-03

申请号：US12393797

申请日：2009-02-26

申请人： Hiroshi MATSUSHITA ,  Kenichi Kadota ,  Toshiyuki Aritake

发明人： Hiroshi MATSUSHITA ,  Kenichi Kadota ,  Toshiyuki Aritake

IPC分类号： G06K9/00

CPC分类号： G06K9/4604 ,  G06T7/0004 ,  G06T2207/20021 ,  G06T2207/30148

摘要： The present invention provides a linear pattern detection method which can extract and detect linear patterns distinguished by a microscopic defect distribution profile even if skipped measurements are taken. The linear pattern detection method acquires a defect map created based on results of defect inspection of a wafer; divides the defect map into a plurality of first segments; calculates a correlation coefficient of a point sequence in each of the first segments, the point sequence corresponding to a defect group contained in the first segments; calculates a total number of those first segments in which the correlation coefficient is equal to or larger than a first threshold; and determines that the wafer contains a linear pattern if the total number is equal to or larger than a second threshold.

摘要翻译： 本发明提供一种线性图案检测方法，其可以提取和检测由微观缺陷分布轮廓区分的线性图案，即使进行了跳过的测量。 线性图案检测方法获取基于晶片的缺陷检查结果创建的缺陷图; 将缺陷图划分成多个第一段; 计算每个第一段中的点序列的相关系数，对应于包含在第一段中的缺陷组的点序列; 计算相关系数等于或大于第一阈值的那些第一段的总数; 并且如果总数等于或大于第二阈值，则确定晶片包含线性模式。

公开(公告)号：US07573066B2

公开(公告)日：2009-08-11

申请号：US11730818

申请日：2007-04-04

申请人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

发明人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

IPC分类号： H01L23/58

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.

摘要翻译： 半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在 平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

公开(公告)号：US07138283B2

公开(公告)日：2006-11-21

申请号：US10865927

申请日：2004-06-14

申请人： Hiroshi Matsushita ,  Kenichi Kadota

发明人： Hiroshi Matsushita ,  Kenichi Kadota

IPC分类号： G01R31/26

CPC分类号： G11C29/006 ,  G11C2029/0403 ,  G11C2029/4402 ,  G11C2029/5002

摘要： A method of detecting a wafer failure includes extracting the wafer ID of a target wafer in the target lot from the lot ID, extracting the location information of a failure in the target wafer, calculating a to-be-quantified first wafer feature amount for unevenness of a wafer failure distribution, calculating a first lot feature amount for each target lot, extracting a fabrication process for the target lot and a fabrication apparatus, carrying out a significant test for the fabrication apparatus used in each fabrication process, and detecting the fabrication apparatus with a significant difference as a first abnormal apparatus.

摘要翻译： 检测晶片故障的方法包括从批号ID提取目标批次中的目标晶片的晶片ID，提取目标晶片中的故障的位置信息，计算用于不均匀的待定量的第一晶片特征量 计算每个目标批次的第一批特征量，提取目标批次的制造过程和制造装置，对在每个制造过程中使用的制造装置进行显着测试，并检测制造装置 作为第一异常装置具有显着差异。

公开(公告)号：US06975953B2

公开(公告)日：2005-12-13

申请号：US10784939

申请日：2004-02-25

申请人： Kenichi Kadota

发明人： Kenichi Kadota

IPC分类号： G01R31/00 ,  G06F11/30 ,  G11C7/00 ,  H01L21/66 ,  H01L23/544

CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： An analysis method for a semiconductor device includes measuring electrical characteristics of TEGs fabricated on a semiconductor substrate; classifying the TEGs into a first TEG category where a systematic failure has not occurred and a second TEG category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the TEGs in the first TEG category from among parameters of the TEGs expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the TEGs in the second TEG category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances.

摘要翻译： 半导体器件的分析方法包括测量在半导体衬底上制造的TEG的电特性; 将TEG分类为未发生系统故障的第一TEG类别和基于电特性发生系统故障的第二TEG类别; 使用表示为数值的TEG的参数，使用第一TEG类别中的TEG的第一参数创建第一比较马哈拉诺比斯参考空间; 通过使用第一比较马氏距参考空间来计算第一参数的第一比较马氏距离和第二TEG类别中的TEG的第二参数的第二比较马氏距离; 并比较第一和第二比较马氏距离。

公开(公告)号：US20050251365A1

公开(公告)日：2005-11-10

申请号：US11090217

申请日：2005-03-28

申请人： Hiroshi Matsushita ,  Kenichi Kadota

发明人： Hiroshi Matsushita ,  Kenichi Kadota

IPC分类号： G05B19/418 ,  G06F11/30 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/66

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32222 ,  Y02P90/10 ,  Y02P90/14 ,  Y02P90/22

摘要： A system for identifying a manufacturing tool causing a failure, includes a data generating module generating factorial effect data, based on information on a failure lot group by using an orthogonal array, a chart generating module generating a factorial effect chart based on the factorial effect data, a selection module selecting failure lots caused by the same reason for a failure from among the failure lot group, based on the factorial effect chart, and an identification module identifying a manufacturing tool used as a common tool for the selected plurality of failure lots, based on history information of the manufacturing tool group.

摘要翻译： 一种用于识别导致故障的制造工具的系统包括：数据生成模块，基于通过使用正交阵列的故障批次组的信息来生成因子效果数据;图表生成模块，基于所述因子效应数据生成阶乘效果图 选择模块，基于所述阶乘效应图，选择由所述失败批次群组中与故障相同原因造成的故障批次;以及识别模块，其识别用作所选择的多个故障批次的共同工具的制造工具， 根据制造工具组的历史信息。

公开(公告)号：US20050021303A1

公开(公告)日：2005-01-27

申请号：US10865927

申请日：2004-06-14

申请人： Hiroshi Matsushita ,  Kenichi Kadota

发明人： Hiroshi Matsushita ,  Kenichi Kadota

IPC分类号： H01L21/66 ,  G06F11/30 ,  G11C29/00 ,  H01L21/02

CPC分类号： G11C29/006 ,  G11C2029/0403 ,  G11C2029/4402 ,  G11C2029/5002

摘要： A method of detecting a wafer failure includes extracting the wafer ID of a target wafer in the target lot from the lot ID, extracting the location information of a failure in the target wafer, calculating a to-be-quantified first wafer feature amount for unevenness of a wafer failure distribution, calculating a first lot feature amount for each target lot, extracting a fabrication process for the target lot and a fabrication apparatus, carrying out a significant test for the fabrication apparatus used in each fabrication process, and detecting the fabrication apparatus with a significant difference as a first abnormal apparatus.

摘要翻译： 检测晶片故障的方法包括从批号ID提取目标批次中的目标晶片的晶片ID，提取目标晶片中的故障的位置信息，计算用于不均匀的待定量的第一晶片特征量 计算每个目标批次的第一批特征量，提取目标批次的制造过程和制造装置，对在每个制造过程中使用的制造装置进行显着测试，并检测制造装置 作为第一异常装置具有显着差异。

公开(公告)号：US07405088B2

公开(公告)日：2008-07-29

申请号：US10801992

申请日：2004-03-17

申请人： Hiroshi Matsushita ,  Kenichi Kadota ,  Kenji Kawabata ,  Yoshiyuki Shioyama

发明人： Hiroshi Matsushita ,  Kenichi Kadota ,  Kenji Kawabata ,  Yoshiyuki Shioyama

IPC分类号： H01L21/00

CPC分类号： H01L22/20

摘要： A failure analysis method according to the invention includes inputting the positions of failures in multiple wafers of an input device; preparing multiple sections in the multiple wafers; calculating feature amounts, which are represented by at least one numerical value representing a distribution of the failures in the multiple wafers, for each of the multiple sections; and representing by a first numerical value, the degree of similarity between the multiple wafers in terms of the feature amounts. Subsequently, the method includes detecting another wafer, which has the first numerical value greater than a predetermined first threshold, for each of the multiple wafers and forming a similar wafer group of multiple wafers with similar distributions of the failures.

摘要翻译： 根据本发明的故障分析方法包括在输入设备的多个晶片中输入故障的位置; 准备多个晶片的多个部分; 计算特征量，其由表示多个晶片中的故障的分布的至少一个数值表示，用于多个部分中的每一个; 并且通过第一数值表示在特征量方面的多个晶片之间的相似度。 随后，该方法包括对于每个多个晶片检测具有大于预定第一阈值的第一数值的另一个晶片，并且形成具有类似故障分布的多个晶片的相似晶片组。

公开(公告)号：US20080011947A1

公开(公告)日：2008-01-17

申请号：US11730818

申请日：2007-04-04

申请人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

发明人： Hiroyuki Hayashi ,  Takamitsu Nagai ,  Tomonobu Noda ,  Kenichi Kadota ,  Hisaki Kozaki

IPC分类号： G01N23/00 ,  H01L21/66

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.

摘要翻译： 半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在 平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

公开(公告)号：US20050194590A1

公开(公告)日：2005-09-08

申请号：US11068778

申请日：2005-03-02

申请人： Hiroshi Matsushita ,  Tomonobu Noda ,  Kenichi Kadota ,  Junji Sugamoto ,  Yukihiro Ushiku

发明人： Hiroshi Matsushita ,  Tomonobu Noda ,  Kenichi Kadota ,  Junji Sugamoto ,  Yukihiro Ushiku

IPC分类号： H01L21/66 ,  G01R31/26 ,  H01L21/02 ,  H01L23/58

CPC分类号： H01L22/20 ,  G01R31/2894 ,  G05B23/0248 ,  G05B2219/31357 ,  Y02P90/14

摘要： A control system for a manufacturing apparatus includes manufacturing information input unit acquiring time series data of apparatus parameters controlling manufacturing apparatuses; failure pattern classification module classifying in-plane distributions of failures of each of the wafers into failure patterns; an index calculation unit configured to statistically process the time series data by algorithms to calculate indices corresponding to the respective algorithms; an index analysis unit providing first and second frequency distributions of the indices categorized with and without the target failure pattern, to implement significance test between the first and second frequency distributions; and an abnormal parameter extraction unit extracting failure cause index of failure pattern by comparing value of the significance test with test reference value.

摘要翻译： 一种制造装置的控制系统，包括制造信息输入单元，其获取控制制造装置的装置参数的时间序列数据; 故障模式分类模块将每个晶片的故障平面内分布分为故障模式; 索引计算单元，被配置为通过算法对所述时间序列数据进行统计处理，以计算与各个算法对应的索引; 索引分析单元，提供分类有和没有目标故障模式的索引的第一和第二频率分布，以实现第一和第二频率分布之间的显着性测试; 异常参数提取单元通过比较显着性检验值与检测参考值，提取失效原因指标的故障模式。