发明申请
- 专利标题： CRYSTAL GROWTH METHOD AND APPARATUS
- 专利标题（中）： 水晶生长方法和装置
-
申请号： US11782052申请日： 2007-07-24
-
公开(公告)号： US20080017099A1公开(公告)日： 2008-01-24
- 发明人: Masaaki Onomura , Yoshiyuki Harada
- 申请人： Masaaki Onomura , Yoshiyuki Harada
- 申请人地址： JP Tokyo 105-8001
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo 105-8001
- 优先权： JP2006-201369 20060724
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C30B23/00
摘要：
A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.
公开/授权文献
- US07862657B2 Crystal growth method and apparatus 公开/授权日：2011-01-04
信息查询
IPC分类:
