发明申请
US20080017931A1 Metal-oxide-semiconductor transistor device, manufacturing method thereof, and method of improving drain current thereof
审中-公开
金属氧化物半导体晶体管器件及其制造方法及其漏电流的改善方法
- 专利标题： Metal-oxide-semiconductor transistor device, manufacturing method thereof, and method of improving drain current thereof
- 专利标题（中）： 金属氧化物半导体晶体管器件及其制造方法及其漏电流的改善方法
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申请号： US11458393申请日： 2006-07-19
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公开(公告)号： US20080017931A1公开(公告)日： 2008-01-24
- 发明人: Hung-Lin Shih , Jih-Shun Chiang , Hsien-Liang Meng
- 申请人： Hung-Lin Shih , Jih-Shun Chiang , Hsien-Liang Meng
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/8238
摘要：
A metal-oxide-semiconductor transistor device comprises a semiconductor substrate comprising an active region and an insulation region, a selective epitaxial layer between the active region and a gate structure, wherein a peripheral portion of the epitaxial layer is over a peripheral portion of the insulation region, such that the width of the channel is increased and a drain current is improved.
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