发明申请
- 专利标题: SHALLOW TRENCH ISOLATION FORMATION
- 专利标题(中): 浅层分离形成
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申请号: US11866471申请日: 2007-10-03
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公开(公告)号: US20080017932A1公开(公告)日: 2008-01-24
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 申请人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger
- 主分类号: H01L29/72
- IPC分类号: H01L29/72 ; H01L29/76
摘要:
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.
公开/授权文献
- US07652334B2 Shallow trench isolation formation 公开/授权日:2010-01-26