Invention Application
US20080020579A1 Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer
审中-公开
在(100)硅晶片的(111)表面中制造膜的方法
- Patent Title: Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer
- Patent Title (中): 在(100)硅晶片的(111)表面中制造膜的方法
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Application No.: US10550384Application Date: 2004-03-22
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Publication No.: US20080020579A1Publication Date: 2008-01-24
- Inventor: Warner Jurrien Venstra
- Applicant: Warner Jurrien Venstra
- Applicant Address: NL Delft
- Assignee: Technische Universiteit Delft
- Current Assignee: Technische Universiteit Delft
- Current Assignee Address: NL Delft
- Priority: NL1022995 20030321
- International Application: PCT/NL04/00197 WO 20040322
- Main IPC: H01L21/311
- IPC: H01L21/311

Abstract:
The invention relates to a method for the fabrication of a membrane oriented in a (111) plane of a (100) silicon wafer. To this end the method comprises the following steps: applying a mask to both sides of the wafer, wherein portions of the sides are covered by the mask; and the at least partial removal by etching away silicon material from the portions of the two sides of the wafer that are not covered. This method is characterised in that the etching step substantially removes the silicon material forming recesses in the two surfaces of the wafer, such that the walls of the recesses are formed by (111) planes, and in that not covered portions at both sides of the wafer are aligned in relation to one another such that a (111) plane is formed and the distance d between said two planes is less than the thickness of the silicon wafer, so as to form a membrane in the (111) plane having a thickness d. Such a membrane has many application possibilities in the field of MEMS, for example by dividing the membrane into individual cantilevers.
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