发明申请
- 专利标题: NITRIDE SEMICONDUCTOR DEVICE
- 专利标题(中): 氮化物半导体器件
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申请号: US11782914申请日: 2007-07-25
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公开(公告)号: US20080023706A1公开(公告)日: 2008-01-31
- 发明人: Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
- 申请人: Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-202782 20060726
- 主分类号: H01L29/15
- IPC分类号: H01L29/15
摘要:
A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 kΩ/cm or more.
公开/授权文献
- US07935983B2 Nitride semiconductor device 公开/授权日:2011-05-03