发明申请
- 专利标题： SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE
- 专利标题（中）： 半导体层结构与超导
-
申请号： US11780512申请日： 2007-07-20
-
公开(公告)号： US20080025360A1公开(公告)日： 2008-01-31
- 发明人: Christoph Eichler , Alfred Lell
- 申请人： Christoph Eichler , Alfred Lell
- 优先权： DE102006034821.4 20060727; DE102006046227.0 20060929
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L33/00 ; H01S5/34
摘要：
The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.
公开/授权文献
- US07822089B2 Semiconductor layer structure with superlattice 公开/授权日：2010-10-26
信息查询
IPC分类:
