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公开(公告)号：US20110168977A1
公开(公告)日：2011-07-14
申请号：US13009422
申请日：2011-01-19
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 一种包括半导体层结构的光电子部件，所述半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体层叠层构成的超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一种元素的不同含量，至少一种元素的含量分级在 超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。 以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。
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公开(公告)号：US20080025360A1
公开(公告)日：2008-01-31
申请号：US11780512
申请日：2007-07-20
申请人： Christoph Eichler , Alfred Lell
发明人： Christoph Eichler , Alfred Lell
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0213 , H01S5/0422 , H01S5/3063 , H01S5/3077 , H01S5/3213 , H01S5/3216 , H01L2924/00
摘要： The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.
摘要翻译： 半导体层结构包括由第一组合物（a）和至少一种第二组合物（b）的III-V半导体化合物的交替堆叠层（9a，9b）组成的超晶格（9）。 超晶格（9）的层（9a，9b）含有预定浓度的掺杂剂，关于掺杂剂的浓度在超晶格（9）中与至少两层相同的组成不同，其浓度 所述掺杂剂在所述超晶格（9）的至少一层（9 a，9 b）内分级，并且所述超晶格（9）包含掺杂有不同掺杂剂或包含至少一层（9a，9b） 那是未掺杂的。 超晶格（9）的电气和光学特性可以以这种方式以最佳可能的方式适应给定的要求。
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公开(公告)号：US07893424B2
公开(公告)日：2011-02-22
申请号：US11780514
申请日：2007-07-20
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 半导体层结构包括由第一和至少一种第二类型的III-V族化合物半导体的堆叠层组成的超晶格。 超晶格中不同类型的相邻层相对于至少一个元素的组成不同，至少两个相同类型的层具有至少一个元素的不同含量，至少一个元素的含量被分级在 超晶格的层，并且超晶格的层含有预定浓度的掺杂剂，超晶格包含掺杂有不同掺杂剂的层。 以这种方式，超晶格的电，光学和外延特性可以以给定的要求，特别是外延约束的最佳可能方式进行调整。
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公开(公告)号：US20080054247A1
公开(公告)日：2008-03-06
申请号：US11780514
申请日：2007-07-20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0422 , H01S5/2009 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01L2924/00
摘要： The semiconductor layer structure includes a superlattice (9) composed of stacked layers (9a, 9b) of III-V compound semiconductors of a first (a) and at least one second type (b). Adjacent layers of different types in the superlattice (9) differ in composition with respect to at least one element, at least two layers of the same type have a different content (cAl, cIn) of the at least one element, the content (cAl, cIn) of the at least one element is graded within a layer (9a, 9b) of the superlattice (9), and the layers (9a, 9b) of the superlattice contain dopants in predefined concentrations, with the superlattice (9) comprising layers (9a, 9b) that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice (9) can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.
摘要翻译： 半导体层结构包括由第一（a）和至少一种第二类型（b）的III-V族化合物半导体的堆叠层（9a，9b）组成的超晶格（9）。 超晶格（9）中不同类型的相邻层在组成上相对于至少一个元素不同，至少两层相同类型具有不同的含量（c 至少一个元件的内容物，（a）至少一个元素的内容（c，S，N，C）在一个层（9a， （9）的超导体（9b），并且超晶格的层（9a，9b）含有预定浓度的掺杂剂，超晶格（9）包含掺杂不同掺杂剂的层（9a，9b） 。 以这种方式，超晶格（9）的电，光学和外延特性可以以最佳可能的方式适应给定的要求，特别是外延约束。
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公开(公告)号：US09048631B2
公开(公告)日：2015-06-02
申请号：US14006472
申请日：2012-04-18
申请人： Christoph Eichler , Dimitri Dini , Alfred Lell
发明人： Christoph Eichler , Dimitri Dini , Alfred Lell
IPC分类号： H01S5/22 , H01S5/065 , B82Y20/00 , H01S5/10 , H01S5/223 , H01S5/227 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.
摘要翻译： 具有脊波导结构的激光光源包括具有多个功能层的半导体层序列和适用于在操作期间产生激光的有源区域。 功能层中的至少一个被设计为脊形波导结构的脊。 半导体层序列具有模式滤波器结构，其形成为脊的一部分和/或沿功能层的主延伸平面形成在脊附近和/或垂直于脊下方的功能层的主延伸平面。
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公开(公告)号：US20140217425A1
公开(公告)日：2014-08-07
申请号：US14239935
申请日：2012-07-30
申请人： Fabian Kopp , Alfred Lell , Christoph Eichler , Clemens Vierheilig , Sönke Tautz
发明人： Fabian Kopp , Alfred Lell , Christoph Eichler , Clemens Vierheilig , Sönke Tautz
IPC分类号： G02B6/125
CPC分类号： G02B6/125 , H01L33/0045 , H01S5/0264 , H01S5/1017 , H01S5/1085 , H01S2301/166
摘要： A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.
摘要翻译： 辐射发射半导体部件包括半导体本体。 半导体本体具有具有用于产生辐射的有源区的半导体层序列。 半导体部件具有波导，其被设置用于横向地引导在有源区域中产生的辐射并且在反射镜表面和耦合出表面之间延伸。 波导垂直于镜面，与耦合出面的法线形成锐角。
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公开(公告)号：US20130148683A1
公开(公告)日：2013-06-13
申请号：US13730363
申请日：2008-12-17
申请人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
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公开(公告)号：US08340146B2
公开(公告)日：2012-12-25
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/00
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
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公开(公告)号：US20100278203A1
公开(公告)日：2010-11-04
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/22 , H01L33/44 , H01L21/302
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
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公开(公告)号：US08964808B2
公开(公告)日：2015-02-24
申请号：US13730363
申请日：2008-12-17
申请人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人： Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号： H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
摘要翻译： 激光光源特别包括具有有源区（45）和辐射耦合输出区（12）的半导体层序列（10），辐射耦合输出区域（12）具有不同的第一部分区域（121）和第二部分区域（122） 以及滤波器结构（5），其中所述有源区（45）在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射（52）的相干第一电磁辐射（51） 相干第一电磁辐射（51）沿着发射方向（90）由第一部分区域（121）发射，非相干的第二电磁辐射（52）由第一部分区域（121）和第二部分区域 （122），所述第二波长范围包括所述第一波长范围，并且所述滤波器结构（5）至少部分地衰减由所述有源区沿着所述发射方向发射的非相干的第二电磁辐射（52） （90）。
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