发明申请
- 专利标题: SELF-PASSIVATING PLASMA RESISTANT MATERIAL FOR JOINING CHAMBER COMPONENTS
- 专利标题(中): 用于接合室组件的自钝性等离子体材料
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申请号: US11461689申请日: 2006-08-01
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公开(公告)号: US20080029211A1公开(公告)日: 2008-02-07
- 发明人: JENNIFER Y. SUN , Li Xu , Senh Thach , Kelly A. McDonough , Robert Scott Clark
- 申请人: JENNIFER Y. SUN , Li Xu , Senh Thach , Kelly A. McDonough , Robert Scott Clark
- 主分类号: B32B37/00
- IPC分类号: B32B37/00
摘要:
Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.
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