发明申请
US20080029484A1 In-situ process diagnostics of in-film aluminum during plasma deposition
审中-公开
等离子体沉积期间膜内铝的原位工艺诊断
- 专利标题: In-situ process diagnostics of in-film aluminum during plasma deposition
- 专利标题(中): 等离子体沉积期间膜内铝的原位工艺诊断
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申请号: US11492639申请日: 2006-07-25
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公开(公告)号: US20080029484A1公开(公告)日: 2008-02-07
- 发明人: Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
- 申请人: Soonam Park , Farhan Ahmad , Hemant P. Mungekar , Young S. Lee
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; G06F19/00 ; H01L21/306 ; H05H1/24 ; C23C16/00
摘要:
The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.