发明申请
- 专利标题: Electric field read/write head and method of manufacturing same and data read/write device
- 专利标题(中): 电场读/写头及其制造方法及数据读写装置
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申请号: US11723567申请日: 2007-03-21
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公开(公告)号: US20080030909A1公开(公告)日: 2008-02-07
- 发明人: Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
- 申请人: Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2006-0072925 20060802
- 主分类号: G11B5/33
- IPC分类号: G11B5/33 ; G11B5/127 ; G11B5/82
摘要:
An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.