Method and Material For Forming A Double Exposure Lithography Pattern

Invention Application

US20080032508A1 Method and Material For Forming A Double Exposure Lithography Pattern 有权

Title translation: 用于形成双曝光平版印刷图案的方法和材料

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Patent Title: Method and Material For Forming A Double Exposure Lithography Pattern
Patent Title (中): 用于形成双曝光平版印刷图案的方法和材料
Application No.: US11563805

Application Date: 2006-11-28
Publication No.: US20080032508A1

Publication Date: 2008-02-07
Inventor: Ching-Yu Chang
Applicant: Ching-Yu Chang
Applicant Address: TW Hsin-Chu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee Address: TW Hsin-Chu
Main IPC: H01L21/467
IPC: H01L21/467

Method and Material For Forming A Double Exposure Lithography Pattern

Abstract:

A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract(Chinese):

光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

Public/Granted literature

US07759253B2 Method and material for forming a double exposure lithography pattern Public/Granted day:2010-07-20

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/465	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/469）
H01L21/467	.......应用掩膜的