发明申请
US20080034154A1 Multi-Channel Flash Module with Plane-Interleaved Sequential ECC Writes and Background Recycling to Restricted-Write Flash Chips
有权
具有平面交错顺序ECC的多通道闪存模块写入和背景回收限制写入闪存芯片
- 专利标题: Multi-Channel Flash Module with Plane-Interleaved Sequential ECC Writes and Background Recycling to Restricted-Write Flash Chips
- 专利标题(中): 具有平面交错顺序ECC的多通道闪存模块写入和背景回收限制写入闪存芯片
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申请号: US11871627申请日: 2007-10-12
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公开(公告)号: US20080034154A1公开(公告)日: 2008-02-07
- 发明人: Charles Lee , Abraham Ma , Frank Yu , David Chow , Ming-Shiang Shen
- 申请人: Charles Lee , Abraham Ma , Frank Yu , David Chow , Ming-Shiang Shen
- 申请人地址: US CA San Jose 95132
- 专利权人: SUPER TALENT ELECTRONICS INC.
- 当前专利权人: SUPER TALENT ELECTRONICS INC.
- 当前专利权人地址: US CA San Jose 95132
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A RAM mapping table is restored from flash memory using plane, block, and page addresses generated by a physical sequential address counter. The RAM mapping table is restored following a plane-interleaved sequence generated by the physical sequential address counter using interleaved bits extracted from the lowest bits of the logical block index. These plane-interleave bits are split into a LSB and a MSB, with middle physical block bits between the LSB and MSB. The physical sequential address counter generates a physical block number by incrementing the plane-interleave bits before the middle physical block bits, and then relocating the MSB to above the middle physical block bits. This causes blocks to be accessed in a low-high sequence of 0, 1, 4096, 4097, 2, 3, 4098, 4099, etc. in the four planes of flash memory. Background recycling and ECC writes are also performed.
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