发明申请
US20080035946A1 Rare earth element-doped silicon oxide film electroluminescence device
审中-公开
稀土元素掺杂氧化硅膜电致发光器件
- 专利标题： Rare earth element-doped silicon oxide film electroluminescence device
- 专利标题（中）： 稀土元素掺杂氧化硅膜电致发光器件
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申请号： US11973525申请日： 2007-10-09
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公开(公告)号： US20080035946A1公开(公告)日： 2008-02-14
- 发明人: Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
- 申请人： Wei Gao , Tingkai Li , Robert Barrowcliff , Yoshi Ono , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L23/58
摘要：
A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
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