发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11882164申请日： 2007-07-31
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公开(公告)号： US20080035985A1公开(公告)日： 2008-02-14
- 发明人: Satoshi Shimizu , Yoshihiro Ikeda
- 申请人： Satoshi Shimizu , Yoshihiro Ikeda
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 优先权： JP2006-220062(P) 20060811
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/31
摘要：
The semiconductor device which is hard to generate malfunction and whose reliability of an element is high, and its manufacturing method are offered.Each of a plurality of convex patterns is formed on the front surface of a semiconductor substrate so that it may have a floating gate and a control gate. The insulating layer has covered the side surface and the upper surface of a plurality of convex patterns, and the bottom between convex patterns. A contact interlayer insulating layer covers the cavity part located via an insulating layer between a plurality of convex patterns and on a plurality of convex patterns, and has a through hole. An insulating layer closes a through hole and occludes the cavity part.
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