发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11873907申请日： 2007-10-17
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公开(公告)号： US20080042237A1公开(公告)日： 2008-02-21
- 发明人: Toshiaki IWAMATSU , Takashi Ipposhi
- 申请人： Toshiaki IWAMATSU , Takashi Ipposhi
- 申请人地址： JP Chiyoda-ku
- 专利权人： Renesas Technolgy Corp.
- 当前专利权人： Renesas Technolgy Corp.
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2003-422762 20031219
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
Plural trench isolation films are provided with portions of an SOI layer interposed therebetween in a surface of the SOI layer in a resistor region (RR) where a spiral inductor (SI) is to be provided. Resistive elements are formed on the trench isolation films, respectively. Each of the trench isolation films includes a central portion which passes through the SOI layer and reaches a buried oxide film to include a full-trench isolation structure, and opposite side portions each of which passes through only a potion of the OSI layer and is located on the SOI layer 3 to include a partial-trench isolation structure. Thus, each of the trench isolation films includes a hybrid-trench isolation structure.
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