发明申请
- 专利标题： METHOD FOR IMPROVED DIELECTRIC PERFORMANCE
- 专利标题（中）： 改进电介质性能的方法
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申请号： US11465575申请日： 2006-08-18
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公开(公告)号： US20080044986A1公开(公告)日： 2008-02-21
- 发明人: Olaf Storbeck , Wieland Pethe
- 申请人： Olaf Storbeck , Wieland Pethe
- 主分类号： H01L21/477
- IPC分类号： H01L21/477
摘要：
A method of decreasing the density of dielectric interface traps in an integrated circuit device. In accordance with the teachings of the present invention, the method includes providing a semiconductor substrate, processing the semiconductor substrate to form an integrated circuit device, such as a field effect transistor including forming a dielectric layer, and heating the dielectric layer in an atmosphere comprising at least one gaseous halogen compound.
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