发明申请
US20080045005A1 Pattern formation method and method for forming semiconductor device
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用于形成半导体器件的图案形成方法和方法
- 专利标题： Pattern formation method and method for forming semiconductor device
- 专利标题（中）： 用于形成半导体器件的图案形成方法和方法
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申请号： US11907018申请日： 2007-10-09
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公开(公告)号： US20080045005A1公开(公告)日： 2008-02-21
- 发明人: Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-175879 20030620
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/4763
摘要：
A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.
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