LCD device suppressing a parallax problem
    1.
    发明授权
    LCD device suppressing a parallax problem 有权
    LCD设备抑制视差问题

    公开(公告)号:US07787078B2

    公开(公告)日:2010-08-31

    申请号:US11133424

    申请日:2005-05-19

    IPC分类号: G02F1/1335

    CPC分类号: G02F1/134309 G02F1/133553

    摘要: An LCD device includes front substrate and rear substrate sandwiching therebetween an LC layer, front polarizing film and rear polarizing film disposed on the front side of the front substrate and the rear side of the rear substrate, respectively, and a reflecting film disposed on the rear side of the rear polarizing film. The distance between the LC layer and the reflecting film is set at 0.8 mm or smaller, to solve a parallax problem.

    摘要翻译: LCD装置包括分别位于前基板的前侧和后基板的后侧的LC层,前偏振膜和后偏振膜之间的前基板和后基板,以及设置在后基板上的反射膜 侧偏光膜。 LC层和反射膜之间的距离设定为0.8mm以下,以解决视差问题。

    Method for forming semiconductor device
    2.
    发明授权
    Method for forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号:US07291554B2

    公开(公告)日:2007-11-06

    申请号:US11090885

    申请日:2005-03-28

    IPC分类号: H01L21/28

    摘要: A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.

    摘要翻译: 一种形成半导体器件的方法包括以下步骤:形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上,通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上,在第一温度下使所述可流动膜固化,形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜,形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模,并且通过使用所述掩模来蚀刻所述燃烧膜,形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

    Active matrix liquid crystal display panel

    公开(公告)号:US20050280755A1

    公开(公告)日:2005-12-22

    申请号:US11210750

    申请日:2005-08-25

    摘要: An active matrix liquid crystal display panel by which a good display characteristic can be obtained without suffering from gradation reversal over a wide visibility angle range. A liquid crystal layer 4 is formed such that the thickness thereof varies in accordance with transmission wavelengths of color layers 6, 7 and 8 so that a very good display which does not exhibit any coloring in whichever direction it is viewed may be obtained. An active matrix substrate A includes a plurality of opposing electrodes 2, a plurality of pixel electrodes 3 parallel to the opposing electrodes 2, a thin film transistor, and an orientation film 23 all formed on a glass substrate 10. A color filter substrate C includes an orientation film 56 provided on one surface of another glass substrate 10 and an optical compensation layer 35 provided on the other surface of the glass substrate 10 and formed from a plastic film. The two substrates are disposed such that the orientation films thereof oppose each other, and polarization plates 34 and 5 are disposed on the outer sides of the two substrates, and a liquid crystal layer 4 having a positive refractive index anisotropy is provided between the orientation films 23. The optical compensation layer 35 has a negative one axial refractive index anisotropy and can cancel a retardation produced in the liquid crystal layer 4 thereby to suppress white floating of a black display portion.

    Method for forming semiconductor device
    4.
    发明申请
    Method for forming semiconductor device 审中-公开
    半导体器件形成方法

    公开(公告)号:US20050191860A1

    公开(公告)日:2005-09-01

    申请号:US11102445

    申请日:2005-04-07

    摘要: A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable film at a first temperature with the pressing member pressed against the flowable film; and forming a burned film with a flat top face by burning the solidified film through annealing of the solidified film at a second temperature higher than the first temperature.

    摘要翻译: 一种形成半导体器件的方法包括以下步骤:在衬底上形成具有流动性的由绝缘材料制成的可流动膜; 通过用按压部件压制可流动膜来平坦化可流动膜的顶面; 通过使按压部件压靠在可流动膜上,在第一温度下使可流动膜退火而形成固化膜; 以及通过在比所述第一温度高的第二温度下通过使所述固化膜退火来燃烧所述固化膜来形成具有平坦顶面的燃烧膜。

    Pattern formation method and method for forming semiconductor device
    5.
    发明申请
    Pattern formation method and method for forming semiconductor device 有权
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号:US20050170269A1

    公开(公告)日:2005-08-04

    申请号:US11098371

    申请日:2005-04-05

    摘要: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译: 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上,将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火,使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    Liquid crystal display device
    7.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:US06456352B1

    公开(公告)日:2002-09-24

    申请号:US09590285

    申请日:2000-06-09

    IPC分类号: G02F11343

    CPC分类号: G02F1/133707 G02F2201/121

    摘要: A liquid crystal layer is sandwiched between two substrates of glass or the like and a gate terminal, a gate wiring, a control electrode and a drain terminal are arranged on the liquid crystal layer. The liquid crystal display device further has a control electrode terminal of the control electrode which is in an independent condition without crossing the gate wiring. A terminal part including this control electrode terminal and the gate terminal as well as the drain terminal is arranged on the outer side of the substrate panel. According to this construction, an arbitrary voltage can be applied to the control electrode so that the diagonal electrical field, which is necessary for the orientation division, can be set optimum in the intensity. Thereby the orientation division can be carried out properly. In addition, since there is no overlapping between the control electrode, including wiring and terminals, and the gate wiring, the short circuit problem can be alleviated to create good manufacturing yield of the liquid crystal display device.

    摘要翻译: 液晶层夹在玻璃等的两个基板之间,在液晶层上设置栅极端子,栅极布线,控制电极和漏极端子。 液晶显示装置还具有控制电极的控制电极端子,该控制电极端子处于独立状态而不与栅极布线交叉。 包括该控制电极端子和栅极端子以及漏极端子的端子部分配置在基板面板的外侧。 根据该结构,可以对控制电极施加任意电压,使得可以将强度中的取向分割所必需的对角电场设定为最佳。 由此,可以适当地进行取向分割。 此外,由于在包括布线和端子的控制电极和栅极布线之间没有重叠,可以减轻短路问题,从而产生液晶显示装置的良好的制造成品率。

    Tablet integrated liquid crystal display apparatus with less parallax

    公开(公告)号:US06295101B1

    公开(公告)日:2001-09-25

    申请号:US09393025

    申请日:1999-09-09

    IPC分类号: G02F11333

    摘要: In a tablet integrated type liquid crystal display apparatus, a first transparent substrate is provided on a view side. The first substrate is a plastic substrate having a thickness equal to or thinner than 0.6 mm, and a counter electrode is formed on the first substrate. A second substrate on which a driving layer composed of switching elements and pixel electrodes respectively connected to the switching elements is formed. The second substrate is a glass substrate having a thickness in a range of 0.6 mm to 1.1 mm. A guest host liquid crystal layer sandwiched by the first substrate and the second substrate such that the guest host liquid crystal is driven by a voltage applied between the counter electrode and the pixel electrode. A tablet electrode layer may be provided between the first substrate and the counter electrode. Alternatively, a tablet electrode layer may be provided on the first substrate on an opposite side of the counter electrode. In this case, a protecting film is provided on the tablet electrode layer. In addition, a tablet electrode layer may be provided between the second substrate and the driving layer such that the tablet electrode layer is isolated from the driving layer.

    Quantum effect device, method of manufacturing the same
    9.
    发明授权
    Quantum effect device, method of manufacturing the same 失效
    量子效应器件,制造方法

    公开(公告)号:US5972744A

    公开(公告)日:1999-10-26

    申请号:US37016

    申请日:1998-03-09

    摘要: A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.

    摘要翻译: 硅岛部分形成在量子线中,以夹在氧化硅膜的一对隧道势垒部分之间。 在硅岛部分的一侧,用于电位控制的栅电极设置有介于其间的氧化硅膜的栅极绝缘膜。 在硅岛部分的另一侧,用于电位控制的控制电极设置有隔着氧化硅膜的绝缘膜。 每个隧道势垒部分具有量子线收缩结构,该量子线收缩结构通过使用原子力显微镜等将形成为场增强氧化物膜的量子线,即其表面氧化成基本上 中心部分在其部分。